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Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Nirmal, D. Ajayan, J. Fay, Patrick J.
Innbundet / 2021 / Engelsk

Produktdetaljer

ISBN
9781032061610
Publisert
2021-12-22
Utgiver
Vendor
CRC Press
Vekt
720 gr
Høyde
234 mm
Bredde
156 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
290

Redaktør
Nirmal, D.
Ajayan, J.
Fay, Patrick J.

Biographical note

D. Nirmal is presently working as an Associate Professor and Head in the Department of Electronics and Communication engineering. His research interests includes Nanoelectronics, 1D/2D Materials, Carbon nanotubes, GaN Technology, Device and Circuit Simulation – GSL, Sensors, Nanoscale device design and modelling.

J. Ajayan is an Associate Professor in the Department of Electronics and Communication Engineering at SR University, Telangana, India. His areas of interest are microelectronics, semiconductor devices, nanotechnology, RF integrated circuits and photovoltaics.

Patrick Fay is currently a Professor with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA. He established the High Speed Circuits and Devices Laboratory, Notre Dame, and oversaw the design, construction, and commissioning of the 9000-ft2 class 100 cleanroom housed in Stinson-Remick Hall at Notre Dame. He has served as the Director of this facility since 2003.

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Nirmal, D. Ajayan, J. Fay, Patrick J.
Innbundet / 2021 / Engelsk
Nirmal, D. Ajayan, J. Fay, Patrick J.
Innbundet / 2021 / Engelsk
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This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare fieldThis book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Les mer
The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.
Les mer
1. An Introduction to Nanoscale CMOS Technology Transistor. 2. High Performance Tunnel Field Effect Transistor (TFET) for Future Low Power Applications. 3. Ultra Low Power III-V Tunnel Field Effect Transistors. 4. Performance Analysis of Carbon Nanotube and Graphene Tunnel Field Effect Transistors. 5. Characterization of Silicon FinFETs Under Nanoscale Dimension. 6. Germenium or SiGe FinFETs for Enhanced Performance in Low Power Applications. 7. Switching Performance Analysis of III-V FinFET. 8. Negative Capacitance Field Effect Transistors to Address the Fundamental Limitations in Technology Scaling. 9. Recent Trends in Compact Modeling of Negative Capacitance Field Effect Transistors. 10. Fundamentals of 2D Materials. 11. Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field Effect Transistor (FET) Devices for Low Power Applications.
Les mer

Relaterte produkter

This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare fieldThis book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Les mer
The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.
Les mer
1. An Introduction to Nanoscale CMOS Technology Transistor. 2. High Performance Tunnel Field Effect Transistor (TFET) for Future Low Power Applications. 3. Ultra Low Power III-V Tunnel Field Effect Transistors. 4. Performance Analysis of Carbon Nanotube and Graphene Tunnel Field Effect Transistors. 5. Characterization of Silicon FinFETs Under Nanoscale Dimension. 6. Germenium or SiGe FinFETs for Enhanced Performance in Low Power Applications. 7. Switching Performance Analysis of III-V FinFET. 8. Negative Capacitance Field Effect Transistors to Address the Fundamental Limitations in Technology Scaling. 9. Recent Trends in Compact Modeling of Negative Capacitance Field Effect Transistors. 10. Fundamentals of 2D Materials. 11. Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field Effect Transistor (FET) Devices for Low Power Applications.
Les mer

Produktdetaljer

ISBN
9781032061610
Publisert
2021-12-22
Utgiver
Vendor
CRC Press
Vekt
720 gr
Høyde
234 mm
Bredde
156 mm
Aldersnivå
P, 06
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
290

Redaktør
Nirmal, D.
Ajayan, J.
Fay, Patrick J.

Biographical note

D. Nirmal is presently working as an Associate Professor and Head in the Department of Electronics and Communication engineering. His research interests includes Nanoelectronics, 1D/2D Materials, Carbon nanotubes, GaN Technology, Device and Circuit Simulation – GSL, Sensors, Nanoscale device design and modelling.

J. Ajayan is an Associate Professor in the Department of Electronics and Communication Engineering at SR University, Telangana, India. His areas of interest are microelectronics, semiconductor devices, nanotechnology, RF integrated circuits and photovoltaics.

Patrick Fay is currently a Professor with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA. He established the High Speed Circuits and Devices Laboratory, Notre Dame, and oversaw the design, construction, and commissioning of the 9000-ft2 class 100 cleanroom housed in Stinson-Remick Hall at Notre Dame. He has served as the Director of this facility since 2003.

Relaterte produkter