Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Innbundet /
2016
/ Engelsk
Produktdetaljer
ISBN
9781498745123
Publisert
2016-10-03
Utgiver
Vendor
CRC Press Inc
Vekt
884 gr
Høyde
254 mm
Bredde
178 mm
Aldersnivå
UP, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
392
Biographical note
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Les mer
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).
Les mer
Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Produktdetaljer
ISBN
9781498745123
Publisert
2016-10-03
Utgiver
Vendor
CRC Press Inc
Vekt
884 gr
Høyde
254 mm
Bredde
178 mm
Aldersnivå
UP, P, 05, 06
Språk
Product language
Engelsk
Format
Product format
Innbundet
Antall sider
392
Biographical note
Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang are affiliated with Xidian University, China.