PrefaceChapter 1: Growth and Wafer ManufacturingEpitaxial Growth of Boron Carbide on 4H-SiCTransfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency CombsPrevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-GrowthSuppression of In-Grown SF Formation and BPD Propagation in 4H-SiC Epitaxial Layer by Sublimating Sub-Surface Damage before the GrowthImprovement of the Conformational Stability of 150 mm 4H SiC WafersNi-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser AnnealingHigh Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC BoulesEffect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect VisibilityStudy of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers3C-SiC Island Growth on 4H-SiC Terraces: Statistical Evidence for the Orientation Selection RuleTemperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC CrystalDevelopment of High Quality 8 Inch 4H-SiC Substrates4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light ScatteringTailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power DevicesInvestigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiCStudy on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- MeasurementsAl Implantation in SiC; Where Will the Ions Come to Rest?High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed GasTransport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich ConfigurationSurface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETsExploring UV-Laser Effects on Al-Implanted 4H-SiCBenchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch ReactorOptimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial WafersQuality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition MethodDeep Level Reduction in 4H-SiC Treated by Plasma ImmersionImproving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO2- Based SlurryChapter 2: Material CharacterizationTemperature Dependent Electrical Properties of N-Type 4H-SiC SubstratesControlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced ReconstructionEvaluation of Hysteresis Response in Achiral Edges of Graphene Nanoribbons on Semi-Insulating SiCQuantification of Secondary Electron Doping Contrast in the Scanning Electron Microscope on 4H-SiCPL Signatures from Decoration of Dislocations in SiC Substrates and Epitaxial WafersLight Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature AnnealingCharacterization of Prismatic Slip in SiC Crystals by Chemical Etching MethodRecent Progress in Non-Contact Electrical Characterization for SiC and Related CompoundsCorrelation between Q-Factor and Residual Stress in Epitaxial 3C-SiC Double-Clamped Beam ResonatorsSelective Oxidation during AFM Electrical Characterization of Doped SiC LayersEvaluation of Crystal Quality and Dopant Activation of Smart CutTM - Transferred 4H-SiC Thin FilmAccurate Determination of the Temperature Dependence of the Refractive Index of 4H-SiC at the Wavelength of 632 nmChapter 3: DefectsCorrelation of Extended Defects with Electrical Yield of SiC MOSFET DevicesStrain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiСMinority Carrier Traps Induced by Neutron Reactions with 4H-SiCStacking Faults Originating from Star-Defects in 4H-SiCP-Type Impurities in 4H-SiC Calculated Using Density Functional TheoryCharge State Control over Point Defects in SiC DevicesInvestigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon CarbideThe Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence CenterBasal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiCHigh Sensitivity Surface Defect Inspection of SiC and SmartSiCTM Substrates Using a DUV Laser-Based SystemStudy of Defects in 4H-SiC Epitaxy at Various Buffer Layer Growth ConditionsS-EVC Method for Sorting Wafers with Defects that Extend to Bar Shaped SSFsAnalysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray TopographyThe Development of the Advanced Inspection System to Screen out the BPDs that Extend to Bar Shaped SSFs under Forward BiasingChapter 4: X-ray AnalysisImplementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC MaterialsAnalysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray TopographyEffective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC WafersEvaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction MeasurementsChapter 5: MOS Interfaces and ProcessesOutlook for Dielectric/SiC Interfaces for Future Generation MOSFETsPassivation of Very Fast Near-Interface Traps at the 4H-SiC/SiO2 Interface Using Sodium Enhanced OxidationInfluence of Post-Ion-Implantation Annealing Temperature on the Characteristics of Gate Oxide on 4H Silicon CarbideEvolution of Interface State Density and Near Interface Oxide Traps under Controlled Nitric Oxide Annealing in SiO2/SiC Lateral MOSFETsOxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD SimulationsThe Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and ReliabilityNO Annealing Simulation of 4H-SiC/SiO2 by Charge-Transfer Type Molecular DynamicsImprovement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing TreatmentHigh Mobility Silicon Dioxide Layers on 4H-SiC Deposited by Means of Atomic Layer DepositionChapter 6: MOSFET PhysicsTemperature Dependent Mobility Model for Predictive TCAD Simulations of 4H-SiCHypothesis to Explain Threshold Drift due to Dynamic Bipolar Gate StressGate Dielectric Current Transport Mechanisms in N-SiC Metal Oxide Semiconductor CapacitorComplications of Charge Pumping Analysis for Silicon Carbide MOSFETsHeavy-Ion-Induced Defects in Degraded SiC Power MOSFETsPhysical Modelling of Charge Trapping Effects in SiC MOSFETsChapter 7: Devices and OptimizationA Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy ImplantationThreshold Voltage Adjustment on 4H-SiC MOSFETs Using P-Doped Polysilicon as a Gate MaterialFabrication of Quasi-Vertical GaN-On-SiC Trench MOSFETsDemonstration of SiC Trench Gate MOSFETs with Narrow Cell Pitch Using Source Self-Aligned ProcessOptimized 750V SiC MOSFETs for Electric Vehicle Inverter OperationAssessing, Controlling and Understanding Parameter Variations of SiC Power MOSFETs in Switching OperationInfluence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS DiodeTowards Sic-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al EmittersEnhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETsOptimizing PECVD a-SiC:H Films for Neural Interface PassivationSuppression of Short Channel Effects for a SiC MOSFET Based on the S-MOS Cell ConceptHigh Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS(on)Effect of Termination Region on Unclamped Inductive Switching Failure for 4H-SiC VDMOS650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event BurnoutNumerical Analysis of the Schottky Contact Properties on the Forward Conduction of MPS/JBS SiC DiodesA Fully Self-Aligned SiC Trench MOSFET with 0.5 μm Channel PitchInvestigations on 4H-SiC Low Voltage nMOSFETs with Thin Thermal SiO2/ Deposited Oxide Gate DielectricHighly Efficient Floating Field Rings for SiC Power Electronic Devices - A Systematic Experimental StudyReduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded SubstratesFabrication of an Open Gate-4H-SiC Junction Field Effect Transistor for Bio-Related and Chemical Sensing ApplicationsTailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by Physical Simulations10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device EfficiencyA Scalable SPICE Electrothermal Compact Model for SiC MOSFETs: A Comparative Study between the LEVEL-3 and the BSIMChapter 8: JFETs DeviceImpact of Dimensions and Doping on the Breakdown Voltage of a Trench 4H-SiC Vertical JFETEarly Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICsOptimization of TaSi2 Processing for 500 °C Durable SiC JFET-R Integrated CircuitsChapter 9: Device CharacterizationA Novel Non-Invasive Cryostatic Spectrometry Technique to Characterize the Carriers’ Multiplication Factor in Silicon Carbide Power DevicesElectroluminescence Spectra of a Gate Switched MOSFET at Cryogenic and Room Temperatures Agree with Ab Initio Calculations of 4H-SiC/SiO2-Interface DefectsComparison of the Performance-Degrading Near-Interface Traps in Commercial SiC MOSFETsSiC MOSFETs Biased C-V Curves: A Temperature InvestigationBody Diode of 1.2kV SiC MOSFET: Unipolar and Bipolar OperationPulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane DislocationsInvestigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO2/ SiN Gate StackMeasurement and Analysis of Body Diode Stress of 3.3 kV SiC-Mosfets with Intrinsic Body Diode and Embedded SBDImpact of Turn-Off Gate Voltage and Temperature on Threshold Voltage Instability in Pulsed Gate Voltage Stresses of SiC MOSFETsSmall-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETsLifetime Projection of Bipolar Operation of SiC DMOSFETChapter 10: ReliabilityBias-Induced Instability of 4H-SiC CMOSOn the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETsRobustness of SiC MOSFETs under Repetitive High Current PulsesReliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling StressChip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 CyclesAvalanche Robustness Investigation of SiC Avalanche Diodes at High TemperaturesAC-Stress Degradation in SiC MOSFETsPower Cycling on Lateral GaN and β-Ga2O3 TransistorsTemperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V MeasurementsHumidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical PackagesReliability and Standardization for SiC Power DevicesEnergy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky DiodesImpact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETsProven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate