PrefaceChapter 1: Defects in Devices on Silicon CarbideImplementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC MaterialsCorrelation of Extended Defects with Electrical Yield of SiC MOSFET DevicesStrain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiСMinority Carrier Traps Induced by Neutron Reactions with 4H-SiCStacking Faults Originating from Star-Defects in 4H-SiCP-Type Impurities in 4H-SiC Calculated Using Density Functional TheoryThe Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence CenterChapter 2: Synchrotron X-ray Topography in Research of Silicone Carbide-Based DevicesAnalysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray TopographyEffective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC WafersEvaluation of Strain in 3C-SiC/Si Epiwafers from X-Ray Diffraction MeasurementsAnalysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray TopographyChapter 3: Research and Designing of Machines and EquipmentA Study on Coldflame Propagation Characteristics Applying Amplified Ignition Source to Overcome Landfill gas’s Flame Retardant LimitThermal Effect of Bobbin Tool Friction Stir Welding on the Mechanical Behavior of High Density Polyethylene Sheets: Experimental StudyHydrodynamic Stability Analysis for MHD Casson Fluid Flow through a Restricted ChannelOptimization of Aircraft Fuel Dump Rate towards the Mitigation of Post-Impact Fire