PrefaceTotal Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton IrradiationReliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power PulsesStudy of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias TestsDependence of the Silicon Carbide Radiation Resistance on the Irradiation TemperatureAnomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking FaultsEarly-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS DiodesA Unique Failure Mode of SiC MOSFETs under Accelerated HTRBDesign Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P StructureExperimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature SensorsDynamic Bias-Temperature Instability Testing in SiC MOSFETsUIS Ruggedness of Parallel 4H-SiC MOSFETsThe Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing ConditionsSingle Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion ImpactAFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETsModelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB MeasurementsHigh Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier DiodeInvestigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFETDemonstration of 800°C SiC MOSFETs for Extreme Temperature ApplicationsDynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs