Preface3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage ClassInvestigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTsJunction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On CharacteristicsEffect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching CharacteristicsOhmic Contact Resistance in SiC Diodes with Ti and NiSi P+ ContactsInfluence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-OnAnalysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared ThermographyNon-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFETA Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback MechanismSiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD SimulationsHigh-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power ModuleNormally-Off 1200V Silicon Carbide JFET Diode with Low VFOn the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETsStudy of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical SimulationsAnalytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker DeviceVisualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) TechniqueDesign and Characterization of an Optical 4H-SiC Bipolar Junction TransistorTemperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate StructuresExcellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa TerminationFrequency Investigation of SiC MOSFETs C-V Curves with Biased DrainExperimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETsComparison of Si CMOS and SiC CMOS Operational AmplifiersComparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiCComparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETsThe First Optimisation of a 16 kV 4H-SiC N-Type IGCTInfluence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFETInvestigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETsPower Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced DegradationEstimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes