PrefaceChapter 1: Silicon Carbide Wafer ManufacturingEpitaxial Growth of Boron Carbide on 4H-SiCPrevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-GrowthImprovement of the Conformational Stability of 150 mm 4H SiC WafersHigh Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging FieldsEffect of Sub-Surface Damage Layer Removal by Sublimation Etching of 4H-SiC Bulk Wafers on PL Imaging of Crystal Defect VisibilityTemperature Gradient Control with an Air-Pocket Design for Growth of High Quality SiC Crystal4H-SiC Full Wafer Mapping Image of CMP-Finished Sub-Surface Damage by Laser Light ScatteringInvestigation of the Nucleation Process during the Initial Stage of PVT Growth of 4H-SiCAl Implantation in Sic; Where Will the Ions Come to Rest?Chapter 2: Electronic PackagingAnalysis of Transmission Performance for Fine Pitch InterconnectInterfacial Delamination Validation on Fan-Out Wafer-Level Package Using Finite Element MethodFabrication of Nanocomposite PDMS/Graphene as Flexible Substrate at Different Graphene VolumeChapter 3: Optoelectronic and Electronic DevicesPerformance of MOS Capacitor with Different Dielectric Material Simulated Using Silvaco TCAD ToolsHumidity Sensor Performance Based ZnO/SnO2 Nanorods Structure Using Different ZnO Seed LayerOpto-Electronic Characterisation of GaAsBi/GaAs Multiple Quantum Wells for Photovoltaic ApplicationsCharacterization of Breath Sensor at Different Frequencies in Outdoor Condition