PrefaceInvestigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS CapacitorsVenus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit BoardCoupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power DevicesConcept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power ConvertersComparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface IsolationModeling the Charging of Gate Oxide under High Electric FieldComplementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance MicroscopyTemperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °CDetection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 InterfacesA Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control GateEffects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETsDesign of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETsChannel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETsAnalysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET DesignsRevised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETsImprovement of Reflectance Spectroscopy for Oxide Layers on 4H-SiCDoping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial LayersFail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical ModelingGate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation MethodsFast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD