PrefacePolarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVDVertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx FilmsEstimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD MethodResistivity as a Witness of Local Crystal Growth ConditionsGaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMTSNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked StructureDevelopment of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates4H-SiC Crystal Growth Using Recycled SiC Powder SourceHigh-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth StageThe Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal GrowthInfluence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC BoulesConfirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiCSuppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated ChemistryInvestigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space ApplicationsCharacterization of Growth Sectors in Gallium Nitride Substrate WafersDoping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries