PrefaceChapter 1: Composite Materials and StructuresControl of the Deformation Mode of Aluminum Foam-Filled Tubes as a Function of Foam PorosityCrashworthiness Analysis of Vehicle Crash-Box Filled with Aluminium FoamImproving Fiber-Matrix Compatibility by Surface Modification of Coconut Coir Fiber Using White Rot FungiRamie Fiber Woven Composite: The Effect of Feedrate Variation on the Tensile Strength of the Open Hole in the DrillingMathematical Model of Shear Stress Transfer at Fiber-Matrix Interface of Composite MaterialStudy on the Mechanical Properties and Behavior of Corrugated Cardboard under Tensile and Compression LoadsChapter 2: Functional MaterialsModification of Polyester Properties through Functionalization with PVACellulosic Textile Materials Functionalization with Formic Acid and Improvement of their PropertiesFirst-Principles Insights into the Acetic Acid Sensing Capability of the C39N Armchair NanotubeChapter 3: Reliability of Silicon Carbide Metal Oxide Semiconductor DevicesBias-Induced Instability of 4H-SiC CMOSOn the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETsRobustness of SiC MOSFETs under Repetitive High Current PulsesReliability of SiC MOSFET Power Modules under Consecutive H3TRB and Power Cycling StressChip-Top Packaging Technology for SiC Devices Operational at 250°C with Power-Cycling Durability of over 300,000 CyclesAvalanche Robustness Investigation of SiC Avalanche Diodes at High TemperaturesAC-Stress Degradation in SiC MOSFETsPower Cycling on Lateral GaN and β-Ga2O3 TransistorsTemperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V MeasurementsHumidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical PackagesReliability and Standardization for SiC Power DevicesEnergy-Dependent Impact of Proton Irradiation on 4H-SiC Schottky DiodesImpact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETsProven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device through the Use of SmartSiCTM Substrate