PrefaceEvaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate InterfaceBody Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process ParameterAccuracy of EVC Method for the PiN Diode Pattern on SiC Epi-WaferStudy on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF ExpansionEarly Detection of Bar-Shaped 1SSF before Expansion by PL ImagingAnalysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded SubstratesInvestigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal TreatmentThe Role of Defects on SiC Device Performance and Ways to Mitigate themEmission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic TemperaturesSiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure ControlInvestigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray TopographyCrystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered SubstratesAnalysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated TemperaturesNear-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics SimulationsDifferences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance SpectroscopyInvestigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETsEpitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC WafersBuffer Layer Dependence of Defectivity in 200mm 4H-SiC HomoepitaxyA Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiCPractical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer DefectsAnalysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC CrystalsDevelopment of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray TopographyHigh-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in ProductionNon-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light ScatteringMacro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®Charge Carrier Capture by Prominent Defect Centers in 4H-SiC