PrefaceChapter 1: Semiconductor Materials for Power ElectronicsElectrical Properties of Heavily Al-Doped 4H-SiCA Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiCCharacterization of SiC/SiO2 Interface State under Different NO AnnealingChapter 2: Power Deviсes DesigningThe Gate Oxide Breakdown Failures of 4H-SiC MOS DevicesSimulation of Threshold Voltage Instability of 4H-SiC MOSFETThe Investigation of 1200V SiC MOSFET Short-Circuit Ruggedness and Turn-Off Current TailFactors Affecting Bias Temperature Instability in 4H-SiC MOS CapacitorsReaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiCInfluence of Acceptor Incomplete Ionization in p+ Emitter on SiC LTT with n-Type Blocking BaseStructure and the Thermal Management of a 3-D Silicon Carbide MOSFET ModuleAutomatic Design of a Busbar in SiC Controller