PrefaceChapter 1: Growing and Forming of LayersPolarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVDVertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx FilmsEstimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD MethodResistivity as a Witness of Local Crystal Growth ConditionsGaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMTSNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked StructureDevelopment of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates4H-SiC Crystal Growth Using Recycled SiC Powder SourceHigh-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth StageThe Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal GrowthInfluence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC BoulesConfirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiCSuppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated ChemistryInvestigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space ApplicationsCharacterization of Growth Sectors in Gallium Nitride Substrate WafersDoping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process ChemistriesChapter 2: Wafers and SubstratesSurface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich ApproachHYPREZ Wafering Solutions: A Novel Approach of SiC Wafering SolutionPoly-SiC Characterization and Properties for SmartSiC™Application of Advanced Characterization Techniques to SmartSiC™ Product for Substrate-Level Device Performance OptimizationA Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC WaferHigh-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin FoilsDicing Process for 4H-SiC Wafers by Plasma Etching Using High-Pressure SF6 Plasma with Metal MasksInvestigations on the Recovery of the Electrical Properties of Smart Cut™-Transferred SiC Thin Film Using SiC-on-Insulator StructuresDemonstration of SiC-on-Insulator Substrate with Smart Cut™ Technology for Photonic ApplicationsA Novel Contactless SiC Wafer Planarization Processing after Mechanical Slicing by Dynamic Thermal Annealing ProcessesProposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided LaserIn-Line Charaterization of HPSI SiC Wafers Using High Resolution Surface Photovoltage Spectroscopy (HR-SPS)Characterization of Very Thin 3C-SiC Epilayers on SiChapter 3: Defects of Solid Semiconductor StructuresEvaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate InterfaceBody Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process ParameterAccuracy of EVC Method for the PiN Diode Pattern on SiC Epi-WaferStudy on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF ExpansionEarly Detection of Bar-Shaped 1SSF before Expansion by PL ImagingAnalysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded SubstratesInvestigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal TreatmentThe Role of Defects on SiC Device Performance and Ways to Mitigate themEmission of Trapped Electrons from the 4H-SiC/SiO2-Interface via Photon-Irradiance at Cryogenic TemperaturesSiC MOSFET Gate Oxide Quality Improvement Method in Furnace Thermal Oxidation with Lower Pressure ControlInvestigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray TopographyCrystal Originated Defect Monitoring and Reduction in Production Grade SmartSiC™ Engineered SubstratesAnalysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated TemperaturesNear-Interface Defect Decomposition during NO Annealing Analyzed by Molecular Dynamics SimulationsDifferences between Polar-Face and Non-Polar Face 4H-SiC/SiO2 Interfaces Revealed by Magnetic Resonance SpectroscopyInvestigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETsEpitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC WafersBuffer Layer Dependence of Defectivity in 200mm 4H-SiC HomoepitaxyA Study of Process Interruptions during Pre- and Post-Buffer Layer Epitaxial Growth for Defect Reduction in 4H SiCPractical Improvement of Noncontact Production Monitoring of Doping in SiC Wafers with Extended Epilayer DefectsAnalysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC CrystalsDevelopment of 3-Channel Inspection Analysis Technique for Defects of SiC Epitaxial Wafers Using Optical Inspection, Photoluminescence and X-Ray TopographyHigh-Volume SiC Epitaxial Layer Manufacturing-Maintaining High Materials Quality of Lab Results in ProductionNon-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light ScatteringMacro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing®Charge Carrier Capture by Prominent Defect Centers in 4H-SiCChapter 4: Formation, Processing and Characteristics of Solid-State StructuresFree-Standing 3C-SiC P-Type Doping by Al Ion ImplantationInvestigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS CapacitorsVenus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit BoardTEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial LayerEvolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC SystemsCoupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power DevicesLow Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser AnnealingConcept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power ConvertersImproving HfO2 Thick Films for SiC Power Devices by Si, Y and La DopingComparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface IsolationDopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon CarbideModeling the Charging of Gate Oxide under High Electric FieldTransient-Enhanced Diffusion of Implanted Aluminum in 4H-SiCComplementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance MicroscopyCalibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiCTemperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °CThe Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiCDetection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 InterfacesA Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control GateNi/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser AnnealingLift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiCEffects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETsDesign of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETsPlasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside MetallizationEffect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiCChannel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETsNickel Ohmic Contacts Formed on 4H-SiC by UV Laser AnnealingElectrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin WafersAnalysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET DesignsRevised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETsEmpirical Model of Low-Ohmic Nickel-Based Contact Formation on N-Type 4H-SiC Depending on Thermal BudgetImprovement of Reflectance Spectroscopy for Oxide Layers on 4H-SiCLow-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density OptimizationDoping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial LayersLong Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiCFail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical ModelingMetal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTsPerformance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETsFast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCADHydrogen Etching Process of 4H-SiC (0001) in Limited RegionsComparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFETDemonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power DevicesIncreasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC SurfaceDemonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET ApplicationsHigh Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP SlurryAddition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC CrystalIncreasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard MaskA Comparison between Different Post Grinding Processes on 4H-SiC WafersInfluence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiCHigh-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)Chapter 5: Circuitry and Сharacterizations of Solid-State Power Devices3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage ClassReliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power PulsesInvestigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTsStudy of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias TestsJunction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On CharacteristicsDependence of the Silicon Carbide Radiation Resistance on the Irradiation TemperatureEffect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching CharacteristicsAnomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking FaultsOhmic Contact Resistance in SiC Diodes with Ti and NiSi P+ ContactsEarly-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS DiodesInfluence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power DevicesA Unique Failure Mode of SiC MOSFETs under Accelerated HTRB1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-OnDesign Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P StructureAnalysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared ThermographyExperimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature SensorsDynamic Bias-Temperature Instability Testing in SiC MOSFETsNon-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFETUIS Ruggedness of Parallel 4H-SiC MOSFETsA Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback MechanismThe Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing ConditionsSiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD SimulationsSingle Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion ImpactHigh-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power ModuleAFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETsNormally-Off 1200V Silicon Carbide JFET Diode with Low VFModelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB MeasurementsOn the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETsHigh Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier DiodeStudy of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical SimulationsInvestigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFETDemonstration of 800°C SiC MOSFETs for Extreme Temperature ApplicationsAnalytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker DeviceDynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETsVisualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) TechniqueDesign and Characterization of an Optical 4H-SiC Bipolar Junction TransistorTemperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate StructuresExcellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa TerminationFrequency Investigation of SiC MOSFETs C-V Curves with Biased DrainExperimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETsComparison of Si CMOS and SiC CMOS Operational AmplifiersComparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiCComparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETsThe First Optimisation of a 16 kV 4H-SiC N-Type IGCTInfluence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFETInvestigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETsPower Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced DegradationEstimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier DiodesChapter 6: Materials Application in Quantum, Sensors and Mechatronics SystemsSpin-Orbit Coupling of Color Centers for Quantum ApplicationsOptical Ionization of Qubits and their Silent Charge StatesThermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500°CMonitoring of Graphene Properties in the Process of Viral Biosensor ManufacturingFabrication of Wafer-Level Vacuum-Packaged 3C-SiC Resonant Microstructures Grown on and Silicon250 μm Thick Detectors for Neutron Detection: Design, Electrical Characteristics, and Detector PerformancesStress Fields Distribution and Simulation in 3C-SiC ResonatorsDesign of Monolithically Integrated Temperature Sensors in 4H-SiC JFETsDevice Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor ApplicationsPlasmonic Ag Nanoparticles on SiC for Use as SERS Substrate and in Integrated Optical Sensors for Bio-Chemical ApplicationsExperimental Observation of Raman Assisted and Kerr Optical Frequency Comb in a 4H-Silicon-Carbide on Insulator Microresonator